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Journal of Materials Science: Materials in Electronics

22.01.2020

Rewritable bistable memory device in polymethyl methacrylate carbon nanotube composite films

verfasst von: Enming Zhao, Xiaodan Liu, Guangyu Liu, Bao Zhou, Chuanxi Xing

Erschienen in: Journal of Materials Science: Materials in Electronics

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Abstract

The rewritable bistable memory characteristics have been studied in polymethyl methacrylate (PMMA) and carboxylated multi-walled carbon nanotubes (CNT) composite films. The sandwich structure FTO/PMMA + CNTs/Ag devices were prepared by spin coating and vacuum evaporation process. The device exhibited rewritable bistable resistive switching with switch-on voltage of ~ − 1.5 V, switch-off voltage of ~ 3.4 V, and a high ON/OFF ratio almost of 105. The rewritable behavior of the FTO/PMMA + CNTs/Ag device has been investigated by the endurance test, retention test, and the write-read-erase-reread multiple-cycle tests. The FTO/PMMA + CNTs/Ag device exhibited good retention performance for 2 × 105 s and underwent 104 read pulses. The conduction mechanism in ON state obeys Ohmic conduction; simultaneously, for OFF state, trap-limited space-charge limited conduction was discovered to be the dominant conduction mechanism.

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Metadaten
Titel
Rewritable bistable memory device in polymethyl methacrylate carbon nanotube composite films
verfasst von
Enming Zhao
Xiaodan Liu
Guangyu Liu
Bao Zhou
Chuanxi Xing
Publikationsdatum
22.01.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-02921-x